Method of recovering valuable material from exhaust gas stream of a reaction chamber

US7833358B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Schubert S. Chu · San Francisco, US
• Frederick Wu · Cupertino, US
• Christophe Marcadal · Sunnyvale, US
• Seshadri Ganguli · Sunnyvale, US
• Dien-Yeh Wu · San Jose, US
• Kavita Shah · San Francisco, US
• Paul F. Ma · Santa Clara, US

Key dates

• Filing date: Apr 7, 2006
• Grant date: Nov 16, 2010
• Expiry date: Jun 25, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/905
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A semiconductor processing chamber is cleaned by introducing a cleaning gas into a processing chamber, striking a plasma in a remote plasma source that is in communication with the processing chamber, measuring the impedance of the plasma, vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture, and flowing the gas mixture through an analyzer and into an exhaust collection assembly. The measurement of the impedance of the plasma in combination with the ruthenium concentration provides an accurate indication of chamber cleanliness.