Methods and systems for forming at least one dielectric layer

US7871926B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Li-Qun Xia · Santa Clara, US
• Mihaela Balseanu · Sunnyvale, US
• Victor Nguyen · Novato, US
• Derek R. Witty · Fremont, US
• Hichem M'Saad · Santa Clara, US
• Haichun Yang · Santa Clara, US
• Xinliang Lu · Fremont, US
• Chien-Teh Kao · Sunnyvale, US
• Mei Chang · San Jose, US

Key dates

• Filing date: Oct 22, 2007
• Grant date: Jan 18, 2011
• Expiry date: Mar 2, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer.