Triple layer anti-reflective hard mask
US7888269B2 · kind B2 · utility
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Key dates
| Filing date | Oct 24, 2005 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Jun 3, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a layer of silicon oxynitride (SiON), silicon rich nitride (SiRN) or silicon nitride (Si3N4) over a layer of semiconducting material. The method further includes forming a first layer of anti-reflective material over the layer of SiON, SiRN or Si3N4 and forming a second layer of anti-reflective material over the first layer. The method also includes using the first layer, second layer and layer of SiON, SiRN or Si3N4 as a mask when etching a pattern in the layer of semiconducting material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.