Trench-gate field effect transistor with channel enhancement region and methods of forming the same
US7923776B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2010 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Feb 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect transistor includes a body region of a first conductivity type in a semiconductor region of a second conductivity type. A gate trench extends through the body region and terminating within the semiconductor region. A source region of the second conductivity type extends in the body region adjacent the gate trench. The source region and an interface between the body region and the semiconductor region define a channel region therebetween which extends along the gate trench sidewall. A channel enhancement region of the second conductivity type is formed adjacent the gate trench. The channel enhancement region partially extends into a lower portion of the channel region to thereby reduce a resistance of the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.