Process for wafer backside polymer removal and wafer front side photoresist removal

US7967996B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Kenneth S. Collins · San Jose, US
• Hiroji Hanawa · Sunnyvale, US
• Andrew Nguyen · San Jose, US
• Shahid Rauf · Pleasanton, US
• Ajit Balakrishna · Sunnyvale, US
• Valentin N. Todorow · Palo Alto, US
• Kartik Ramaswamy · San Jose, US
• Martin Jeffrey Salinas · Campbell, US
• Imad Yousif · San Jose, US
• Walter R. Merry · Cupertino, US
• Ying Rui · Meridian, US
• Michael R. Rice · Pleasanton, US

Key dates

• Filing date: May 8, 2007
• Grant date: Jun 28, 2011
• Expiry date: Jan 12, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/68764
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process is provided for removing polymer from a backside of a workpiece and/or photoresist from a front side of the workpiece. For backside polymer removal, the wafer is positioned near the ceiling to above a localized or remote plasma source having a side outlet through the sidewall of the chamber, and backside polymer is removed by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer backside. For front side photoresist removal, the wafer is positioned away from the ceiling and below the side outlet of the localized plasma source, and front side photoresist is remove by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer front side.