Patent · US Expired

Method and apparatus for post silicide spacer removal

US7977185B2 · kind B2 · utility

3Cited by

15References

14Claims

0Family size

Assignees

International Business Machines Corporation · US
Chartered Semiconductor Manufacturing LTD · SG

Inventors

Brian J. Greene · Wappingers Falls, US
Chung Woh Lai · Singapore, SG
Yong Meng Lee · Singapore, SG
Wenhe Lin · Saratoga Springs, US
Siddhartha Panda · Beacon, US
Kern Rim · Yorktown Heights, US
Young Way Teh · Singapore, SG

Key dates

Filing date	Nov 22, 2005
Grant date	Jul 12, 2011
Priority date	—
Expiry date	Apr 18, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/021
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method (and apparatus) of post silicide spacer removal includes preventing damage to the silicide spacer through the use of at least one of an oxide layer and a nitride layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.