Seed/AFM combination for CCP GMR device
US7978440B2 · kind B2 · utility
1Cited by
8References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2008 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Mar 7, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/115
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing the conventional non-magnetic spacer layer of copper with a sandwich structure of two copper layers with an NOL (nano-oxide layer) between them. A process for manufacturing the devices is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.