Cu annealing for improved data retention in flash memory devices

US8026169B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Lu You · Santa Clara, US
• Alexander H. Nickel · San Jose, US
• Minh Quoc Tran · San Jose, US
• Minh Van Ngo · Fremont, US
• Hieu Pham · Milpitas, US
• Erik Wilson · Santa Clara, US
• Hirokazu Tokuno · Cupertino, US
• Amir H. Jafarpour · Pleasanton, US
• Inkuk Kang · San Jose, US
• Robert A. Huertas · Hollister, US

Key dates

• Filing date: Nov 6, 2006
• Grant date: Sep 27, 2011
• Expiry date: Nov 6, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B41/30
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Data retention in flash memory devices, such as mirrorbit devices, is improved by reducing the generation and/or diffusion of hydrogen ions during back end processing, such as annealing inlaid Cu. Embodiments include annealing inlaid Cu in an N2 atmosphere containing low H2 or no H2, and at temperatures less than 200° C., e.g., 100° C. to 150° C.