EUV collector debris management
US8075732B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2004 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Jul 7, 2025 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB08B7/00
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source m…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.