Feedforward/feedback litho process control of stress and overlay
US8111376B2 · kind B2 · utility
19Cited by
16References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 2008 |
| Grant date | Feb 7, 2012 |
| Priority date | — |
| Expiry date | Aug 8, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70783
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and apparatus for process control in a lithographic process are described. Metrology may be performed on a substrate either before or after performing a lithographic patterning process on the substrate. One or more correctables to the lithographic patterning process may be generated based on the metrology. The lithographic patterning process performed on the substrate (or a subsequent substrate) may be adjusted with the correctables.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.