Method for manufacturing a phase change memory device with pillar bottom electrode
US8138028B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 18, 2007 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | May 17, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a mushroom-cell type phase change memory is based upon manufacturing a pillar of bottom electrode material upon a substrate including an array of conductive contacts in electrical communication with access circuitry. A layer of electrode material is deposited making reliable electrical contact with the array of conductive contacts. Electrode material is etched to form a pattern of electrode pillars on corresponding conductive contacts. Next, a dielectric material is deposited over the pattern and planarized to provide an electrode surface exposing top surfaces of the electrode pillars. Next, a layer of programmable resistive material, such as a chalcogenide or other phase change material, is deposited, followed by deposition of a layer of a top electrode material. A device including bottom electrode pillars with larger bottom surfaces than top surfaces is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.