Systems for plasma enhanced chemical vapor deposition and bevel edge etching
US8197636B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2008 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Apr 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.