Chiu Chan
15Patents
6h-index
42Co-inventors
62Inventor score
Filing activity: Jun 30, 2000 → Jan 28, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8361906B2 | Ultra high selectivity ashable hard mask film | Electricity | 53 | Active |
| US8536065B2 | Ultra high selectivity doped amorphous carbon strippable hardmask development and integration | Electricity | 46 | Active |
| US8197636B2 | Systems for plasma enhanced chemical vapor deposition and bevel edge etching | Electricity | 22 | Active |
| US8993454B2 | Ultra high selectivity doped amorphous carbon strippable hardmask development and integration | Electricity | 14 | Active |
| US6468136B1 | Tungsten CMP with improved alignment mark integrity, reduced edge residue, and reduced retainer ring notching | Performing Operations; Transporting | 12 | Expired |
| US7867578B2 | Method for depositing an amorphous carbon film with improved density and step coverage | Electricity | 6 | Active |
| US7922440B2 | Apparatus and method for centering a substrate in a process chamber | Emerging Cross-Sectional Technologies | 4 | Active |
| US8282734B2 | Methods to improve the in-film defectivity of PECVD amorphous carbon films | Chemistry; Metallurgy | 3 | Active |
| US9337072B2 | Apparatus and method for substrate clamping in a plasma chamber | Electricity | 2 | Active |
| US10227695B2 | Shadow ring for modifying wafer edge and bevel deposition | Electricity | 2 | Active |
| US7514125B2 | Methods to improve the in-film defectivity of PECVD amorphous carbon films | Chemistry; Metallurgy | 1 | Active |
| US9653327B2 | Methods of removing a material layer from a substrate using water vapor treatment | Electricity | 1 | Active |
| US8513129B2 | Planarizing etch hardmask to increase pattern density and aspect ratio | Electricity | 1 | Active |
| US9873105B2 | Sorbent material and a method for enhancing sorption performance thereof | Emerging Cross-Sectional Technologies | 0 | Active |
| US11136665B2 | Shadow ring for modifying wafer edge and bevel deposition | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.