In-situ photoresist strip during plasma etching of active hard mask
US8283255B2 · kind B2 · utility
3Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 2007 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Dec 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching features in a silicon layer is provided. A hard mask layer is formed over the silicon layer. A photoresist layer is formed over the hard mask layer. The hard mask layer is opened. The photoresist layer is stripped by providing a stripping gas; forming a plasma with the stripping gas by providing a high frequency RF power and a low frequency RF power, wherein the low frequency RF power has a power less than 50 watts; and stopping the stripping gas when the photoresist layer is stripped. The opening the hard mask layer and the stripping the photoresist layer are performed in a same chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.