Ultra high selectivity ashable hard mask film

US8361906B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Kwangduk Douglas Lee · Redwood City, US
• Martin Jay Seamons · San Jose, US
• Sudha Rathi · San Jose, US
• Chiu Chan · Foster City, US
• Michael H. Lin · San Jose, US

Key dates

• Filing date: May 20, 2010
• Grant date: Jan 29, 2013
• Expiry date: Dec 2, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31144
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, includes introducing a hydrocarbon source into the processing chamber, introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10:1 to about 20:1, generating a plasma in the processing chamber at a substantially lower pressure of about 2 Torr to 10 Torr, and forming a conformal amorphous carbon layer on the substrate.