Method for fabricating air gap interconnect structures
US8383507B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2012 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Jan 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal interconnect structure includes at least a pair of metal lines, a cavity therebetween, and a dielectric metal-diffusion barrier layer located on at least one portion of walls of the cavity. After formation of a cavity between the pair of metal lines, the dielectric metal-diffusion barrier layer is formed on the exposed surfaces of the cavity. A dielectric material layer is formed above the pair of metal lines to encapsulate the cavity. The dielectric metal-diffusion barrier layer prevents diffusion of metal and impurities from one metal line to another metal line and vice versa, thereby preventing electrical shorts between the pair of metal lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.