Spacer as hard mask scheme for in-situ doping in CMOS finFETs

US8420464B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• GlobalFoundries Inc. · KY

Inventors

• Veeraraghavan S. Basker · Schenectady, US
• Kangguo Cheng · Schenectady, US
• Bruce B. Doris · Brewster, US
• Johnathan E. Faltermeier · San Jose, US
• Sivananda K. Kanakasabapathy · Niskayuna, US
• Hemant Adhikari · Albany, US

Key dates

• Filing date: May 4, 2011
• Grant date: Apr 16, 2013
• Expiry date: Aug 26, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A method of fabricating a semiconductor device that includes at least two fin structures, wherein one of the at least two fin structures include epitaxially formed in-situ doped second source and drain regions having a facetted exterior sidewall that are present on the sidewalls of the fin structure. In another embodiment, the disclosure also provides a method of fabricating a finFET that includes forming a recess in a sidewall of a fin structure, and epitaxially forming an extension dopant region in the recess that is formed in the fin structure. Structures formed by the aforementioned methods are also described.