Source gas flow path control in PECVD system to control a by-product film deposition on inside chamber
US8430961B2 · kind B2 · utility
0Cited by
18References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 5, 2008 |
| Grant date | Apr 30, 2013 |
| Priority date | — |
| Expiry date | Feb 10, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4401
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.