Structure and method for forming trench-gate field effect transistor with source plug
US8441069B2 · kind B2 · utility
1Cited by
18References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2011 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | Oct 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect transistor includes a gate trench extending into a semiconductor region. The gate trench has a recessed gate electrode disposed therein. A source region in the semiconductor region flanks each side of the gate trench. A conductive material fills an upper portion of the gate trench so as to make electrical contact with the source regions along upper sidewalls of the gate trench. The conductive material is insulated from the recessed gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.