Methods and apparatus for forming nitrogen-containing layers

US8481433B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Malcolm J. Bevan · Dallas, US
• Johanes F. Swenberg · Los Gatos, US
• Son T. Nguyen · San Jose, US
• Wei Liu · Espoo, FI
• Jose Antonio Marin · San Jose, US
• Jian Li · Fremont, US

Key dates

• Filing date: Mar 29, 2010
• Grant date: Jul 9, 2013
• Expiry date: Aug 2, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02181
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas comprising nitrogen while maintaining the process chamber at a pressure of about 10 mTorr to about 40 mTorr to transform at least an upper portion of the first layer into a nitrogen-containing layer. In some embodiments, the process gas includes ammonia (NH3).