Integrating Schottky diode into power MOSFET
US8502302B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2011 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Aug 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a plurality of trenches including active gate trenches in an active area and gate runner/termination trenches and shield electrode pickup trenches in a termination area outside the active area. The gate runner/termination trenches include one or more trenches that define a mesa located outside an active area. A first conductive region is formed in the plurality of trenches. An intermediate dielectric region and termination protection region are formed in the trenches that define the mesa. A second conductive region is formed in the portion of the trenches that define the mesa. The second conductive region is electrically isolated from the first conductive region by the intermediate dielectric region. A first electrical contact is made to the second conductive regions and a second electrical contact to the first conductive region in the shield electrode pickup trenches. One or more Schottky diodes are formed within the mesa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.