Process to remove Ni and Pt residues for NiPtSi applications
US8513117B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Nov 15, 2011 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Nov 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Embodiments of the invention provide a multi-step cleaning process, comprising exposing the substrate to a nitric acid solution after a first anneal, followed by an aqua regia solution after a second anneal. The substrate can be optionally exposed to a hydrochloric acid solution afterward to completely remove any remaining platinum residues.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.