Ultra high selectivity doped amorphous carbon strippable hardmask development and integration

US8536065B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Martin Jay Seamons · San Jose, US
• Sudha Rathi · San Jose, US
• Kwangduk Douglas Lee · Redwood City, US
• Deenesh Padhi · Sunnyvale, US
• Bok Hoen Kim · San Jose, US
• Chiu Chan · Foster City, US

Key dates

• Filing date: Sep 30, 2011
• Grant date: Sep 17, 2013
• Expiry date: Oct 20, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31144
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method comprises providing a substrate in a processing volume, flowing a hydrocarbon containing gas mixture into the processing volume, generating a plasma of the hydrocarbon containing gas mixture by applying power from an RF source, flowing a boron containing gas mixture into the processing volume, and depositing a boron containing amorphous carbon film on the substrate in the presence of the plasma, wherein the boron containing amorphous carbon film contains from about 30 to about 60 atomic percentage of boron.