Self-limiting oxygen seal for high-K dielectric and design structure

US8564074B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Terence B. Hook · Jericho, US
• Vijay Narayanan · New York, US
• Jay M. Shah · Bengaluru, IN
• Melanie J. Sherony · Fishkill, US
• Kenneth J. Stein · Sandy Hook, US
• Helen Wang · Lagrangeville, US
• Chendong Zhu · Hopewell Junction, US

Key dates

• Filing date: Nov 29, 2011
• Grant date: Oct 22, 2013
• Expiry date: Nov 29, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76224
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate including: a high-K dielectric region; a blocking region disposed against at least one surface of the high-K dielectric region and adapted to form an oxidized layer in response to exposure to oxygen; and an oxygen rich region disposed against the blocking region such that the blocking region is interposed between the oxygen rich region and the high-K dielectric region.