Methods of removing dummy fin structures when forming finFET devices
US8703557B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 15, 2013 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Apr 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
One method disclosed herein includes forming a plurality of fin-formation trenches in a substrate that defines a plurality of fins, wherein at least one of the fins is a dummy fin, forming an insulating material that fills at least a portion of the trenches, forming a recess in a masking layer formed above the insulating material, forming a sidewall spacer on sidewalls of the recess so as to define a spacer opening, performing at least one first etching process on the masking layer through the spacer opening to define an opening in the masking layer that exposes a portion of the insulating material and the dummy fin, and performing at least one second etching process to remove at least a portion of the dummy fin and thereby define an opening in the insulating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.