Method for forming resistive switching memory elements with improved switching behavior
US8787066B2 · kind B2 · utility
6Cited by
6References
20Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 26, 2011 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Aug 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Methods for producing RRAM resistive switching elements having optimal switching behavior include crystalline phase structural changes. Structural changes indicative of optimal switching behavior include hafnium oxide phases in an interfacial region between a resistive switching layer and an electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.