Interfacial oxide used as switching layer in a nonvolatile resistive memory element

US8791445B2 · kind B2 · utility

Assignee

• INTERMOLECULAR, INC. · US

Inventors

• Randall J. Higuchi · San Jose, US
• Tony P. Chiang · Campbell, US
• Ryan Clarke · San Jose, US
• Vidyut Gopal · Sunnyvale, US
• Imran Hashim · Saratoga, US
• Robert A. Huertas · Hollister, US
• Yun Wang · San Jose, US

Key dates

• Filing date: Mar 1, 2012
• Grant date: Jul 29, 2014
• Expiry date: May 9, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/80

Abstract

A nonvolatile resistive memory element includes a host oxide formed from an interfacial oxide layer. The interfacial oxide layer is formed on the surface of a deposited electrode layer via in situ or post-deposition surface oxidation treatments.