Termination of high voltage (HV) devices with new configurations and methods
US8803251B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2011 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Jul 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
Abstract
This invention discloses a semiconductor power device disposed in a semiconductor substrate comprising a heavily doped region formed on a lightly doped region and having an active cell area and an edge termination area. The edge termination area comprises a plurality of termination trenches formed in the heavily doped region with the termination trenches lined with a dielectric layer and filled with a conductive material therein. The edge termination further includes a plurality of buried guard rings formed as doped regions in the lightly doped region of the semiconductor substrate immediately adjacent to the termination trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.