Patent · US Active

Lateral trench transistor, as well as a method for its production

US8815686B2 · kind B2 · utility

0Cited by

13References

19Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Franz Hirler · Isen, DE
Uwe Wahl · Munich, DE
Thorsten Meyer · Regensburg, DE
Michael Rüb · Faak am See, AT
Armin Willmeroth · Friedberg, DE
Markus Schmitt · Neubiberg, DE
Carolin Tolksdorf · Ebersberg, DE
Carsten Schaeffer · Annenheim, AT

Key dates

Filing date	Mar 14, 2013
Grant date	Aug 26, 2014
Priority date	—
Expiry date	Mar 14, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/516
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for production of doped semiconductor regions in a semiconductor body of a lateral trench transistor includes forming a trench in the semiconductor body and introducing dopants into at least one area of the semiconductor body that is adjacent to the trench, by carrying out a process in which dopants enter the at least one area through inner walls of the trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.