Trench-gate field effect transistor
US8884365B2 · kind B2 · utility
2Cited by
19References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 2013 |
| Grant date | Nov 11, 2014 |
| Priority date | — |
| Expiry date | May 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect transistor (FET) includes a body region of a first conductivity type disposed within a semiconductor region of a second conductivity type and a gate trench extending through the body region and terminating within the semiconductor region. The FET also includes a flared shield dielectric layer disposed in a lower portion of the gate trench, the flared shield dielectric layer including a flared portion that extends under the body region. The FET further includes a conductive shield electrode disposed in the trench and disposed, at least partially, within the flared shield dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.