Low resistivity tungsten PVD with enhanced ionization and RF power coupling
US8895450B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2013 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Oct 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.