Diode structures with controlled injection efficiency for fast switching

US8933506B2 · kind B2 · utility

Assignee

• Alpha and Omega Semiconductor, Ltd. · US

Inventors

• Madhur Bobde · Sunnyvale, US
• Harsh Naik · El Segundo, US
• Lingpeng Guan · Santa Clara, US
• Anup Bhalla · Santa Clara, US
• Sik Lui · Sunnyvale, US

Key dates

• Filing date: Jan 31, 2011
• Grant date: Jan 13, 2015
• Expiry date: Feb 6, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/211

Abstract

This invention discloses a semiconductor device disposed in a semiconductor substrate. The semiconductor device includes a first semiconductor layer of a first conductivity type on a first major surface. The semiconductor device further includes a second semiconductor layer of a second conductivity type on a second major surface opposite the first major surface. The semiconductor device further includes an injection efficiency controlling buffer layer of a first conductivity type disposed immediately below the second semiconductor layer to control the injection efficiency of the second semiconductor layer.