Dry-etch selectivity
US8969212B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Mar 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32357
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.