STT-MRAM reference layer having substantially reduced stray field and consisting of a single magnetic domain
US8981503B2 · kind B2 · utility
7Cited by
9References
20Claims
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Key dates
| Filing date | Mar 16, 2012 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Jun 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An STT MTJ cell is formed with a magnetic anisotropy of its free and reference layers that is perpendicular to their planes of formation. The reference layer of the cell is an SAF multilayered structure with a single magnetic domain to enhance the bi-stability of the magnetoresistive states of the cell. The free layer of the cell is etched back laterally from the reference layer, so that the fringing stray field of the reference layer is no more than 15% of the coercivity of the free layer and has minimal effect on the free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.