Ultra high selectivity doped amorphous carbon strippable hardmask development and integration
US8993454B2 · kind B2 · utility
14Cited by
10References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 16, 2013 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Sep 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a boron-containing amorphous carbon film is disclosed. The boron-containing amorphous carbon film comprises from about 10 to 60 atomic percentage of boron, from about 20 to about 50 atomic percentage of carbon, and from about 10 to about 30 atomic percentage of hydrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.