Apparatus and method for controlling edge performance in an inductively coupled plasma chamber
US8999106B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2007 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Jun 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68735
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention generally provides methods and apparatus for controlling edge performance during process. One embodiment of the present invention provides an apparatus comprising a chamber body defining a process volume, a gas inlet configured to flow a process gas into the process volume, and a supporting pedestal disposed in the process volume. The supporting pedestal comprises a top plate having a substrate supporting surface configured to receive and support the substrate on a backside, and an edge surface configured to circumscribe the substrate along an outer edge of the substrate, and a height difference between a top surface of the substrate and the edge surface is used to control exposure of an edge region of the substrate to the process gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.