Device structure and manufacturing method using HDP deposited source-body implant block
US9024378B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2013 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Feb 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.