Method to resolve hollow metal defects in interconnects
US9034664B2 · kind B2 · utility
3Cited by
27References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 2012 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Nov 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of repairing hollow metal void defects in interconnects and resulting structures. After polishing interconnects, hollow metal void defects become visible. The locations of the defects are largely predictable. A repair method patterns a mask material to have openings over the interconnects (and, sometimes, the adjacent dielectric layer) where defects are likely to appear. A local metal cap is formed in the mask openings to repair the defect. A dielectric cap covers the local metal cap and any recesses formed in the adjacent dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.