Method of manufacturing a FinFET device using a sacrificial epitaxy region for improved fin merge and FinFET device formed by same
US9054218B2 · kind B2 · utility
4Cited by
11References
16Claims
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Key dates
| Filing date | Aug 7, 2013 |
| Grant date | Jun 9, 2015 |
| Priority date | — |
| Expiry date | Aug 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a fin field-effect transistor (FinFET) device comprises forming a plurality of fins on a substrate, epitaxially growing a sacrificial epitaxy region between the fins, stopping growth of the sacrificial epitaxy region at a beginning of merging of epitaxial shapes between neighboring fins, and forming a dielectric layer on the substrate including the fins and the sacrificial epitaxy region, wherein a portion of the dielectric layer is positioned between the sacrificial epitaxy region extending from fins of adjacent transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.