Methods of forming isolation material on FinFET semiconductor devices and the resulting devices

US9064890B1 · kind B1 · utility

Assignees

• GlobalFoundries Inc. · KY
• International Business Machines Corporation · US

Inventors

• Ruilong Xie · Niskayuna, US
• Xiuyu Cai · San Diego, US
• Kangguo Cheng · Schenectady, US
• Ali Khakifirooz · Los Altos, US

Key dates

• Filing date: Mar 24, 2014
• Grant date: Jun 23, 2015
• Expiry date: Mar 24, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0167

Abstract

One method disclosed includes, among other things, forming an initial fin, covering a top surface and a portion of the sidewalls of the initial fin structure with etch stop material, forming a sacrificial gate structure above and around the initial fin structure, forming a sidewall spacer adjacent the sacrificial gate structure, performing at least one process operation to remove the sacrificial gate structure and thereby define a replacement gate cavity, performing at least one etching process through the replacement gate cavity to remove a portion of the initial fin structure so as to thereby define a final fin structure and a channel cavity positioned below the final fin structure, and substantially filling the channel cavity with an insulating material.