Magnetic random access memory with perpendicular enhancement layer
US9082951B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2014 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Dec 4, 2034 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to an MTJ memory element including a magnetic free layer structure which comprises one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure comprising a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated therefrom by a perpendicular enhancement layer with the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the perpendicular enhancement layer; and a magnetic fixed layer comprising first and second magnetic fixed sublayers with the second magnetic fixed sublayer formed adjacent to the anti-ferromagnetic coupling layer opposite the second magnetic reference layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.