Solid electrolyte memory elements with electrode interface for improved performance

US9099633B2 · kind B2 · utility

Assignee

• Adesto Technologies Corporation · US

Inventors

• Chakravarthy Gopalan · Santa Clara, US
• Wei Ti Lee · San Jose, US
• Yi Ma · Orlando, US
• Jeffrey A. Shields · Sunnyvale, US

Key dates

• Filing date: Mar 25, 2013
• Grant date: Aug 4, 2015
• Expiry date: Mar 25, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8825

Abstract

A memory element can include a first electrode; a second electrode; and a memory material programmable between different resistance states, the memory material disposed between the first electrode and the second electrode and comprising a solid electrolyte with at least one modifier element formed therein; wherein the first electrode is an anode electrode that includes an anode element that is ion conductible in the solid electrolyte, the anode element being different than the modifier element.