Feedforward/feedback litho process control of stress and overlay
US9116442B2 · kind B2 · utility
15Cited by
23References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2011 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Mar 7, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70783
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and apparatus for process control in a lithographic process are described. Metrology may be performed on a substrate either before or after performing a patterning process on the substrate. One or more correctables to the lithographic patterning process may be generated based on the metrology. The patterning process performed on the substrate (or a subsequent substrate) may be adjusted with the correctables.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.