Replacement low-K spacer

US9129987B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Jing Wan · Malta, US
• Jin Ping Liu · Ballston Lake, US
• Guillaume Bouche · Albany, US
• Andy Wei · Queensbury, US
• Lakshmanan H. Vanamurthy · Dresden, DE
• Cuiqin Xu · Malta, US
• Sridhar Kuchibhatla · Malta, US
• Rama Kambhampati · Albany, US
• Xiuyu Cai · San Diego, US

Key dates

• Filing date: Jan 24, 2014
• Grant date: Sep 8, 2015
• Expiry date: Jan 24, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method includes providing a gate structure having a gate, a first spacer along at least one side of the gate and an interlayer dielectric on at least one of the gate and the first spacer. The interlayer dielectric is removed to reveal the first spacer. The first spacer is removed and a second spacer is deposited on at least one side of the gate. The second spacer is formed of material having a lower dielectric constant than the first spacer.