Magnetic tunnel junction and method for fabricating a magnetic tunnel junction
US9142762B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2014 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Mar 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An improved magnetic tunnel junction device and methods for fabricating the improved magnetic tunnel junction device are provided. The provided two-etch process reduces etching damage and ablated material redeposition. In an example, provided is a method for fabricating a magnetic tunnel junction (MTJ). The method includes forming a buffer layer on a substrate, forming a bottom electrode on the substrate, forming a pin layer on the bottom electrode, forming a barrier layer on the pin layer, and forming a free layer on the barrier layer. A first etching includes etching the free layer, without etching the barrier layer, the pin layer, and the bottom electrode. The method also includes forming a top electrode on the free layer, as well as forming a hardmask layer on the top electrode. A second etching includes etching the hardmask layer; the top electrode layer, the barrier layer, the pin layer, and the bottom electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.