Methods of forming semiconductor device with self-aligned contact elements and the resulting devices
US9153498B2 · kind B2 · utility
15Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Jul 22, 2013 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Jul 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0275
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One method disclosed herein includes forming a sacrificial etch stop material in a recess above a replacement gate structure, with the sacrificial etch stop material in position, forming a self-aligned contact that is conductively coupled to the source/drain region, after forming the self-aligned contact, performing at least one process operation to expose and remove the sacrificial etch stop material in the recess so as to thereby re-expose the recess, and forming a third layer of insulating material in at least the re-exposed recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.