Method to form defect free replacement fins by H2 anneal
US9165837B1 · kind B1 · utility
20Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Oct 28, 2014 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Oct 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0193
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a defect free heteroepitaxial replacement fin by annealing the sacrificial Si fin with H2 prior to STI formation are provided. Embodiments include forming a Si fin on a substrate; annealing the Si fin with H2; forming a STI layer around the annealed Si fin; annealing the STI layer; removing a portion of the annealed Si fin by etching, forming a recess; forming a replacement fin in the recess; and recessing the annealed STI layer to expose an active replacement fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.