Patent · US Active

IGBT with emitter electrode electrically connected with an impurity zone

US9209109B2 · kind B2 · utility

5Cited by

4References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Dorothea Werber · Munich, DE
Thomas Gutt · Taufkirchen, DE
Mathias Plappert · Finkenstein, AT
Frank Pfirsch · Birkenfeld, DE

Key dates

Filing date	Jul 15, 2013
Grant date	Dec 8, 2015
Priority date	—
Expiry date	Jul 15, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D12/461
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An IGBT includes a semiconductor portion with IGBT cells. Each IGBT cell includes a source zone of a first conductivity type, a body zone of a second, complementary conductivity type, and a drift zone of the first conductivity type separated from the source zone by the body zone. An emitter electrode includes a main layer and an interface layer. The interface layer directly adjoins at least one of the body zone and a supplementary zone of the second conductivity type. A contact resistance between the semiconductor portion and the interface layer is higher than between the semiconductor portion and a material of the main layer. For example, the interface layer may reduce diode emitter efficiency and reverse recovery losses in IGBTs.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.