Low-K oxide deposition by hydrolysis and condensation
US9245739B2 · kind B2 · utility
14Cited by
98References
20Claims
0Family size
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Key dates
| Filing date | Aug 20, 2014 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Aug 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for depositing flowable dielectric films using halogen-free precursors and catalysts on a substrate are provided herein. Halogen-free precursors and catalysts include self-catalyzing aminosilane compounds and halogen-free organic acids. Flowable films may be used to fill pores in existing dielectric films on substrates having exposed metallization layers. The methods involve hydrolysis and condensation reactions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.