Epitaxially grown silicon germanium channel FinFET with silicon underlayer

US9287264B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Kangguo Cheng · Schenectady, US
• Eric C. Harley · Lagrangeville, US
• Judson R. Holt · Wappingers Falls, US
• Gauri Karve · Cohoes, US
• Yue Ke · Fishkill, US
• Derrick Liu · Albany, US
• Timothy J. McArdle · Ballston Lake, US
• Shogo Mochizuki · Clifton Park, US
• Alexander Reznicek · Troy, US
• Melissa A. Smith · Wappingers Falls, US

Key dates

• Filing date: Dec 5, 2014
• Grant date: Mar 15, 2016
• Expiry date: Dec 5, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

Embodiments of the present invention provide a method for epitaxially growing a FinFET. One method may include providing a semiconductor substrate including an insulator and an underlayer; forming a channel layer on the semiconductor substrate using epitaxial growth; etching a recess into the channel layer and epitaxially regrowing a portion on the channel layer; etching the channel layer and the underlayer to form fins; forming a gate structure and a set of spacers; etching a source drain region into the channel layer; and forming a source drain material in the source drain region.